According to Nikkei Report, Sony has developed a new storage element for next-generation MRAM (Magnetic Random Access Memory). Existing MRAM elements are subject to deterioration because of the high voltage needed. Sony's new storage element requires 90% less voltage than existing elements, thereby improving the overall performance of MRAM modules.

Meanwhile, Toshiba and NEC also announced that they have developed a new MRAM technology. Current MRAM suffers from a significant number of errors when writing to memory cells. The two companies have devised a new propeller-shaped cell which reduces writing errors. They have also optimized ultrafine-processing technology and circuit creation procedures, and the companies stated that they expect to achieve 256Mb MRAM through these technology improvements.